X-ray refractometry of surface layers

摘要

An X-ray refractometry method with a radiation wavelength of ～0.1 nm is described. A probing beam is directed to a surface under study from the inside through a side cleaved face of a sample or in the opposite direction. The method provides high reliability of measurements and allows small-area analyses. This makes it possible to use it in cases where a device structure is formed on part of a sample and, moreover, sharply decreasing requirements are imposed on the flatness of the sample surface. Results of the measurement of parameters of surface layers for GaAs single crystals and multilayer heterostructures based on Ge{sub}xSi{sub}(1-x)/Si are presented.