Growth of Uniform and Self-Aligned InAs Quantum Dots on Vicinal (100) GaAs Substrate by Metal Organic Chemical Vapor Deposition Technique for Laser Applications

摘要

Self-assembled InAs quantum dots (QDs) were grown on vicinal (100) GaAs substrate.Effect of InAs coverage and growth temperature was studied to optimize QDs for laserapplications. The density and size distribution of QDs varied with the change in InAscoverage and growth temperature. Growth temperature was varied from 400 to 450℃ and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs). Optimumgrowth temperature was found to be 420℃. Density of QDs was first increased andthen decreased with increase in InAs coverage. Linear increase in size and height ofQDs was observed with increase in both growth temperature and InAs Coverage. It wasobserved that these two parameters play crucial role in optimization of uniform QDs.