FERROELECTRIC PROPERTIES OF Pl PbZr_(0.53)Ti_(0.47)O_3 PbO Si (MFIS) STRUCTURES ACCORDING TO THE SUBSTRATE TEMPERATURE DURING THE PbO BUFFER LAYER DEPOSITION

摘要

PbO and PZT thin films were deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering method with PbO and Pb_(1.1)Zr_(0.53)Ti_(0.47)O_3 targets for the application of the Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure. The MFIS structures with the PbO buffer layer show the good electric properties including a high memory window and a low leakage current density. The maximum value of the memory window is 2.0 V under the applied voltage of 9 V for the Pt PZT (200 nm, 400 deg) PbO (80 nm) Si structures with the PbO buffer layer deposited at the substrate temperature of 300 deg.