The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr_(0.53)Ti_(0.47)O_3)-insulator (ZrO_2)-semiconductor (MFIS) thin-film capacitors

摘要

Metal-ferroelectric-insulator-semiconductor (MFIS) thin-film structures using PbZr_(0.53)Ti_(0.47)O_3 (PZT) as the ferroelectric layer and zirconium oxide (ZrO_2) as the insulator layer were fabricated in this work. The leakage current and the C-V memory window were measured for MFIS capacitors with the PZT layer annealed at temperatures of 400℃, 500℃, 600℃, 700℃. The dominant conduction mechanism of Al/PZT(290 nm)/ZrO_2(15 nm)/Si structure is Poole-Frenkel emission in the temperature range of 300-425 K. Under a sweep voltage of 6 V, the largest memory window of 1.31 V was obtained for 500℃-annealed samples. The memory window as a function of insulator thickness was also discussed. More serious charge injection is observed when the voltage was swept from negative to positive.