The effect of band offset on the retention properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3,Y2O3)- semiconductor capacitors and filed effect transistors

摘要

[[abstract]]Metal-ferroelectric-insulator-semiconductor field effect transistors (MFISFETs) and capacitors with the structures of Al/Pb (Zr0.53,Ti0.47) O3 (PZT)/Dy2O3/Si and Al/PZT/Y2O3/Si were fabricated. The variation of the memory window as a function of annealing temperature was studied. The maximum capacitor-voltage (C-V) memory window of Al/PZT/Dy2O3/Si capacitors was 2.95 V. The retention times of Al/PZT/Y2O3/Si and Al/PZT/Dy2O3/Si MFISFETs were 11.5 days and 11.1 h, respectively. The longer retention time of Al/PZT/Y2O3/Si MFISFETs is attributed to the larger conduction band offset at the Y2O3/Si interface (2.3 eV) compared to that of Dy2O3/Si (0.79 eV).