The improvement of retention time of metal-ferroelectric (PbZr_(0.53)Ti_(0.47)O_3)-insulator (ZrO_2)-semiconductor transistors and capacitors by leakage current reduction using surface treatment

摘要

Metal-ferroelectric-insulator-semiconductor transistors (MFISFETs) and capacitors with the structure of Al/Pb (Zr_(0.53),Ti_(0.47)) O_3/ZrO_2/Si were fabricated. The wafers were pretreated with H_2O_2 before ZrO_2 deposition and/or post-treated with HO after ZrO_2 deposition. The leakage current density at 5 V is reduced from 10~(-1) to 5 ×10~(-6) A/cm~2. The subthreshold slope was improved to 91 mV/decade. The MFISFETs maintain a threshold voltage window of about 1.1 V after an elapsed time of 3000 s. The mobility is 267 cm~2/V s. The improvements are most likely due to the reduction of interfacial layer thickness and the interface states at the ZrO_2/Si interface.