The effect of band offset on the retention properties of metal-ferroelectric (PbZr_(0.53)Ti_(0.47)O_3)-insulator (Dy_2O_3, Y_2O_3)-semiconductor capacitors and field effect transistors

摘要

Metal-ferroelectric-insulator-semiconductor field effect transistors (MFISFETs) and capacitors with the structures of Al/Pb (Zr_(0.53),Ti_(0.47)) O_3 (PZT)/Dy_2O_3/Si and Al/PZT/Y_2O_3/Si were fabricated. The variation of the memory window as a function of annealing temperature was studied. The maximum capacitor-voltage (C-V) memory window of Al/PZT/Dy_2O_3/Si capacitors was 2.95 V. The retention times of Al/PZT/Y_2O_3/Si and Al/PZT/Dy_2O_3/Si MFISFETs were 11.5 days and 11.1 h, respectively. The longer retention time of Al/PZT/Y_2O_3/Si MFISFETs is attributed to the larger conduction band offset at the Y_2O_3/Si interface (2.3 eV) compared to that of Dy_2O_3/Si (0.79 eV).