Epitaxial Stabilization of a-PbO2 Structure in MnF2 Layers on Si and GaP.

摘要

Epitaxial MnF2 films as thick as 350 nm have been grown on Si and GaP substrates. X-ray diffractometry revealed that the MnF2 films have the alpha- PbO2 type orthorhombic structure with the lattice parameters a = 0.4953 nm b = 0.5798 nm c = 0.5362 nm. It was found that the films grown on Si111 have 111(Si) //21-BAR1-BAR(MnF2) and 21-BAR1-BAR(Si)// 21-BAR1-BAR(MnF2) onentations. These epitaxial relations agree with three crystallite orientations observed by AFM. Manganese fluoride films grown on SiOO1 had the same orthorhombic structure however 010(MnF2) or 1OO(mnF2) were directed along the surface normal depending on the surface morophology of the buffer layer. Optical and magnetic measurements of the MnF2 layers are underway.