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Atomic layer deposition of ZnO thin film on surface modified monolayer MoS2 with enhanced photoresponse

机译:ZnO薄膜在表面改性单层MOS2上的原子层沉积,具有增强的光响应

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摘要

Monolayer MoS2 was grown on a sapphire substrate by CVD, and then transferred to a silicon wafer substrate. The morphology and crystalline of the MoS2 were characterized by AFM, SEM, and XRD. After perylene-3,4,9,10-tetracarboxylic acid (PTCA) surface treatment on the MoS2, a continuous layer of ZnO thin film was deposited. Finally, the photoresponse of both ZnO and ZnO/MoS2 thin films was investigated, and the ZnO/MoS2 thin film showed enhanced photoresponse over pure ZnO thin film. The higher response of ZnO/MoS2 heterostructure could be attributed to the effective charge transfer between ZnO and MoS2 surface and the re-absorption of light photon resulting in the production of electron-hole pairs.
机译:通过CVD在蓝宝石基板上生长单层MOS2,然后转移到硅晶片基板上。 MOS2的形态和结晶以AFM,SEM和XRD为特征。 在POS2上的Perylene-3,4,9,10-四羧酸(PTCA)表面处理后,沉积连续的ZnO薄膜。 最后,研究了ZnO和ZnO / MOS2薄膜的光响应,ZnO / MOS2薄膜显示出纯ZnO薄膜上的增强光响应。 ZnO / MOS2异质结构的较高响应可以归因于ZnO和MOS2表面之间的有效电荷转移以及光光子的再吸收导致电子孔对的产生。

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