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On the transformation of zincone-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition

机译:次饱和等离子体增强原子层沉积法将锌酮样转变为多孔ZnO薄膜

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摘要

The synthesis of nanoporous ZnO thin films is achieved through annealing of zinc-alkoxide (“zincone”-like) layers obtained by plasma-enhanced atomic layer deposition (PE-ALD). The zincone-like layers are deposited through sub-saturated PE-ALD adopting diethylzinc and O2 plasma with doses below self-limiting values. Nanoporous ZnO thin films were subsequently obtained by calcination of the zincone-like layers between 100–600 °C. Spectroscopic ellipsometry (SE) and X-ray diffraction (XRD) were adopted in situ during calcination to investigate the removal of carbon impurities, development of controlled porosity, and formation and growth of ZnO crystallites. The layers developed controlled nanoporosity in the range of 1–5%, with pore sizes between 0.27 and 2.00 nm as measured with ellipsometric porosimetry (EP), as a function of the plasma dose and post-annealing temperature. Moreover, the crystallinity and crystallite orientation could be tuned, ranging from a powder-like to a (100) preferential growth in the out-of-plane direction, as measured by synchrotron-radiation grazing incidence XRD. Calcination temperature ranges were identified in which pore formation and subsequent crystal growth occurred, giving insights in the manufacturing of nanoporous ZnO from Zn-based hybrid materials.
机译:纳米多孔ZnO薄膜的合成是通过对通过等离子增强原子层沉积(PE-ALD)获得的烷氧基锌(“锌酮”状)层进行退火来实现的。通过采用二乙基锌和O2等离子体的亚饱和PE-ALD沉积类锌酮层,其剂量低于自限值。随后通过在100–600°C之间煅烧类锌酮层获得纳米多孔ZnO薄膜。煅烧过程中采用了椭偏光谱仪(SE)和X射线衍射仪(XRD)研究了碳杂质的去除,可控制的孔隙率的发展以及ZnO晶体的形成和生长。这些层的可控纳米孔隙率在1–5%范围内,用椭圆率孔隙率法(EP)测得的孔径在0.27至2.00 nm之间,这是血浆剂量和退火后温度的函数。此外,可以调节结晶度和微晶取向,其范围从粉末状到面外方向的(100)优先生长,如通过同步辐射辐照掠入射XRD测量的。确定了发生孔形成和随后晶体生长的煅烧温度范围,这为从基于Zn的杂化材料制造纳米多孔ZnO提供了见识。

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