InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 v

摘要

An In_(0.53)Ga_(0.47)As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced subthreshold swing (S) and on/off current ratio (I_(on)/I_(off)) is studied. The proposed TFET achieves remarkable characteristics including S of 16.5 mV/dec, on-state current (I_(on)) of 421 μA/μm, I_(on)/I _(off) of 1.2 × 10~(12) by design optimization in doping type of In_(0.53)Ga_(0.47)As channel at low gate (V _(GS)) and drain voltages (V_(DS)) of 0.5 V. Comparable performances are maintained at V_(DS) below 0.5 V. Moreover, an extremely fast switching below 100 fs is accomplished by the device. It is confirmed that the proposed TFET has strong potentials for the ultra-low operating power and high-speed electron device.