Development of high density plasma assisted sputtering source for high growth rate deposition process

摘要

High speed deposition method was investigated by a high density plasma assisted sputtering source (HiPASS). The HiPASS used a hollow cathode discharge (HCD) gun (maximum current: 60 A) as a high density plasma source. The extracted high density plasma from the HCD gun was transported to the magnetron sputtering region by a magnetic field. In the magnetron sputtering discharge, the transported plasma reduced a breakdown voltage and increased a discharge current about 20%. Also the transported plasma excited the sputtered particles effectively. The additional excitation of the sputtered particles increased Mg deposition rate from 70 nm/min to 130 nm/min and from 32 nm/min to 118 nm/min when a distance between the sputtering target and substrate was 250 mm and 350 mm, respectively. Abroad plasma transport near the magnetron sputtering cathode was important to enhance the deposition rate.