Automotive Reliable Memories Integrated into an Ultra-Low Power 40 nm CMOS Logic Process

摘要

This paper presents highly reliable memories intended for automotive applications developed and embedded into a 40-nm ultra-low power logic platform. An industry leading non-volatile memory (NVM) bitcell has been demonstrated using 12 Mb flash module and a custom layout, robust SRAMbitcell has been validated through 48 Mb array across wide temperature range yet with high reliability. Stringent automotive requirements have been met with base logic as well. Process integration challenges and aggressive design considerations are discussed. The principles and achievementshighlighted in this paper can be extended and applied to other technology nodes as well.