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Optical and Electrical Properties of Transparent Conductive NTTO/Cu/NTTO Multilayer Films Deposited by Magnetron Sputtering

机译:通过磁控溅射沉积的透明导电NTTO / Cu / NTTO多层膜的光学和电性能

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摘要

Nb/Ta-codoped TiO2 (NTTO)/Cu/NTTO (TCT) multilayers formed from two NTTO layers with a Cu interlayer have been deposited by magnetron sputtering on glass substrates for possible use as transparent conductive films. The variations in the growth, structure, and optical and electrical properties of the TCT samples were investigated as a function of the thickness of the Cu layer (d(Cu)). The results show that the crystallinity of the top NTTO film is controlled by d(Cu). The critical thickness of the Cu layer for the formation of a continuous structure is about 11 nm, which is also the inflection point of the visible transmittance. As d(Cu) was increased from 0 nm to 23 nm, the electrical resistivity of the TCT film decreased from 2.7 x 10(-3) omega cm to 5.6 x 10(-5) omega cm. The TCT multilayer with a 16-nm Cu interlayer showed a sheet resistance of 6.7 omega/sq, an average visible transmittance of 80%, and an optimum figure of merit of 3.0 x 10(-2) omega(-1).
机译:Nb / Ta型TiO2(NTTO)/ Cu / NTTO(TCT)由具有Cu中间层的两个NTTO层形成的多层,通过磁控溅射在玻璃基板上沉积,以便可能用作透明导电膜。 研究了TCT样品的生长,结构和光学和电性能的变化作为Cu层的厚度(D(Cu))的函数。 结果表明,顶部NTTO膜的结晶度由D(Cu)控制。 用于形成连续结构的Cu层的临界厚度为约11nm,这也是可见光透射率的拐点。 由于D(Cu)从0nm至23nm增加,TCT膜的电阻率从2.7×10(-3)ωcm降低至5.6×10(-5)ωcm。 具有16nm Cu中间层的TCT多层显示6.7ω/ Sq的薄层电阻,平均可见光透射率为80%,以及3.0×10(-2)ω(-1)的最佳优点。

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  • 来源
    《JOM》 |2019年第10期|共7页
  • 作者单位

    Hubei Engn Univ Sch Phys &

    Elect Informat Engn Xiaogan 432000 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol Sch Mech Sci &

    Engn Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol Sch Mech Sci &

    Engn Wuhan 430074 Hubei Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 有色金属冶炼;金属学与金属工艺;
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