Method of manufacturing thin film solar cell, involves depositing transparent conductive oxide layer as front contact on protective layer by pulsed magnetron sputtering with specific pulse frequency and power density during a pulse

摘要

The method involves depositing a metal layer as electrical back contact (3) over a substrate (2). A compound semiconductor is deposited as absorber layer (4) on the electrical back contact. A transparent protective layer (7) is deposited on the absorber layer. A transparent conductive oxide layer is deposited as front contact (8) on the protective layer by pulsed magnetron sputtering with pulse frequency of 100 Hz and power density of 500 W/cm 2 during a pulse. The transparent conductive oxide layer is made of aluminum-doped zinc oxide.