机译:具有部分P-AlGaN帽层的新型AlGaN / GaN肖特基势垒二极管和用于高击穿和低开启电压的凹陷双金属阳极
Xidian Univ Sch Microelect Key Lab Wide Bandgap Semicond Mat &
Devices Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Bandgap Semicond Mat &
Devices Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Adv Mat &
Nanotechnol Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Bandgap Semicond Mat &
Devices Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Bandgap Semicond Mat &
Devices Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Bandgap Semicond Mat &
Devices Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Mechanoelect Engn Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Bandgap Semicond Mat &
Devices Xian 710071 Shaanxi Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Bandgap Semicond Mat &
Devices Xian 710071 Shaanxi Peoples R China;
AlGaN; GaN Schottky barrier diode; partial p-type cap layer; recessed dual-metal anode; high breakdown voltage; low turn-on voltage;
机译:具有部分P-AlGaN帽层的新型AlGaN / GaN肖特基势垒二极管和用于高击穿和低开启电压的凹陷双金属阳极
机译:AlGaN / GaN肖特基势垒二极管与双阳极金属和P-GaN层相结合的效果在反向击穿和开启电压下
机译:基于多孔阳极的AlGaN / GaN肖特基屏障二极管,具有低开启电压和高均匀性
机译:无凹槽的AlGaN / GaN横向肖特基势垒控制肖特基整流器,具有低导通电压和高反向阻断
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:一个击穿增强的AlGaN / GaN肖特基势垒二极管,其中T阳极位置深入底部缓冲层
机译:半导体测量技术:用于测量硅中注入深度分布的肖特基势垒二极管的差分电容 - 电压分布