Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity

摘要

In this letter, an anode configuration with multi-aperture structure and fully recessed AlGaN barrier layer is proposed in the AlGaN/GaN Schottky barrier diode. With the Schottky junction formed between the Ni anode metal and the channel of two-dimensional electron gas, as well as the evidently enlarged contact profile by the introduction of multiple apertures, the device's forward turning-on performances are dominated by the sidewall Schottky contact, achieving a low turn on voltage of 0.35 V with high uniformity. Accompanied with the high breakdown voltage of 2770 V, the diode achieved a power figure-of-merit as high as 1.1 GW cm(-2).