56.67 fJ/bit single-ended disturb-free 5T loadless 4 kb SRAM using 90 nm CMOS technology

摘要

A novel single-ended SRAM is proposed in this study, where the built-in self-refleshing data retention path has been utilized to reduce the SRAM cell area. In order to reduce the power-delay product, an analytical solution to derive the optimal number of the 5T cells on the BLB is reported in this paper. The proposed SRAM is implement by TSMC 90 nm CMOS technology. According to the measurement results, the energy dissipation per write/read operation is found to be 0.479/0.091 fJ provided that the SRAM cells is supplied a 0.6 V VDD supply.