首页> 外文期刊>Bulletin of the Korean Chemical Society >Effect of an Alkoxyliertes Beta Naphthol on Cu Electrodeposition for Application to Low-Resistivity Cu Interconnects
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Effect of an Alkoxyliertes Beta Naphthol on Cu Electrodeposition for Application to Low-Resistivity Cu Interconnects

机译:烷氧基β萘酚对低电阻率Cu互连施加Cu电沉积的影响

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摘要

Cu thin films were electrodeposited using electrolytes containing alkoxyliertes beta naphthol (ABN) as an organic additive, which shows a strong suppressing effect similar to PEG10000. The surface roughness of Cu thin film decreased, while the grain size remained unchanged with increasing ABN concentration. Consequently, the resistivity of Cu thin film was reduced by 41% compared to Cu thin film electro-deposited using pure electrolyte. In addition, the void free interconnect wire was fabricated by filling of 70-nm wide trench using only ABN, without the help of any accelerator or leveler.
机译:使用含烷氧基β萘酚(ABN)作为有机添加剂的电解质电沉积Cu薄膜,其显示出类似于PEG10000的强抑制效果。 Cu薄膜的表面粗糙度降低,而随着AB1浓度的增加,晶粒尺寸保持不变。 因此,与使用纯电解质电沉积的Cu薄膜电沉积相比,Cu薄膜的电阻率降低了41%。 此外,通过仅使用任何加速器或矫直器的帮助,通过仅使用70-nm宽沟槽来制造空隙自由互连线。

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