ULTRA-THIN Cu ALLOY SEED FOR INTERCONNECT APPLICATION

摘要

A copper interconnection structure which is electroplated onto a silicon layer or semiconductor substrate. The structure includes an ultra-thin copper seed alloy incorporating selectively minor amounts of a dopant material to facilitate a continuous deposition thereof onto the silicon layer or semiconductor substrate. The copper seed alloy may contain dopant material selected from the group of materials consisting of Ru, Ir, Pt, Pd and alloys thereof. Furthermore, there is provided a method for producing the structure.