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机译:N2O表面处理对Inaln / GaN高电子迁移率晶体管电性能的影响
Univ Delaware Dept Elect &
Comp Engn Newark DE 19716 USA;
Univ Delaware Dept Elect &
Comp Engn Newark DE 19716 USA;
Natl Tsing Hua Univ Dept Mat Sci &
Engn Frontier Res Ctr Fundamental &
Appl Sci Matters Hsinchu 30013 Taiwan;
Univ Delaware Dept Phys &
Astron Newark DE 19716 USA;
Univ Delaware Dept Elect &
Comp Engn Newark DE 19716 USA;
Univ Delaware Dept Elect &
Comp Engn Newark DE 19716 USA;
Univ Delaware Dept Elect &
Comp Engn Newark DE 19716 USA;
Univ Delaware Dept Phys &
Astron Newark DE 19716 USA;
Natl Tsing Hua Univ Dept Mat Sci &
Engn Frontier Res Ctr Fundamental &
Appl Sci Matters Hsinchu 30013 Taiwan;
Univ Delaware Dept Elect &
Comp Engn Newark DE 19716 USA;
InAlN/GaN HEMT; N2O surface treatment; gate Schottky barrier diode; electron mobility; scattering mechanism;
机译:N2O表面处理对Inaln / GaN高电子迁移率晶体管电性能的影响
机译:工艺和退火步骤对具有A1_2O_3栅绝缘和钝化作用的InAlN / GaN高电子迁移率晶体管的电性能的影响
机译:具有Al_2O_3,ZrO_2和GdScO_3栅极电介质的InAlN / GaN高电子迁移率晶体管的电性能
机译:生长参数对InAlN / AlN / GaN高电子迁移率晶体管(HEMT)中电性能的影响
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:氮化镓等离子增强原子层沉积对氮化镓基高电子迁移率晶体管的氮化铝表面钝化
机译:双势垒InalN / alGaN / GaN-on-silicon高电子迁移率晶体管,具有基于pt和Ni的栅极堆叠