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机译:氮化硼作为AIGAN / GaN高电子迁移率晶体管的钝化覆盖层
Chonbuk Natl Univ Semicond Phys Res Ctr Sch Semicond &
Chem Engn Jeonju 54899 South Korea;
Korea Atom Energy Res Inst Jeonbuk 56212 South Korea;
Chonbuk Natl Univ Semicond Phys Res Ctr Sch Semicond &
Chem Engn Jeonju 54899 South Korea;
Korea Inst Ind Technol Nanophoton Convergence Technol Grp Gwangju 61012 South Korea;
Korea Inst Ceram Engn &
Technol Jinju 506101 South Korea;
Korea Inst Ind Technol Nanophoton Convergence Technol Grp Gwangju 61012 South Korea;
Korea Inst Ind Technol Nanophoton Convergence Technol Grp Gwangju 61012 South Korea;
Chonbuk Natl Univ Semicond Phys Res Ctr Sch Semicond &
Chem Engn Jeonju 54899 South Korea;
Chonbuk Natl Univ Semicond Phys Res Ctr Sch Semicond &
Chem Engn Jeonju 54899 South Korea;
Korea Inst Ind Technol Nanophoton Convergence Technol Grp Gwangju 61012 South Korea;
Hexagonal Boron Nitride; High Electron Mobility Transistor; Passivation;
机译:氮化硼作为AIGAN / GaN高电子迁移率晶体管的钝化覆盖层
机译:原子层沉积的AI_2O_3和(Ta_2O_5)_(0.12)(Al_2O_3)_)0.88)栅极电介质在CaN包覆的AIGaN / GaN金属氧化物半导体高电子迁移率晶体管特性上的比较
机译:原子层沉积AI_2O_3的比较和(TA_2O_5)_(0.12)(AL_2O_3)_)0.88)栅极电介质对CAN-LAPPEAGAN / GAN金属氧化物半导体高电子迁移率晶体管的特性
机译:离子与Log(Ig)图的应用表征耗尽模式高电子迁移率晶体管,随着将非常薄的蒸发的Al层插入Aigan / GaN高电子迁移率晶体管作为示例
机译:在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
机译:热原子层沉积AlN钝化层对GaN-on-Si高电子迁移率晶体管的影响
机译:层叠氮化硼,实现高性能AlGaN / GaN高电子迁移率晶体管