Gallium nitride based high electron mobility transistor (GaN-HEMT) device with an iron-doped cap layer and method of manufacturing the same

摘要

A compound semiconductor device includes: a GaN-based channel layer; a barrier layer of nitride semiconductor above the channel layer; and a cap layer of nitride semiconductor above the barrier layer, wherein the cap layer includes: a first region doped with Fe; and a second region above the first region, a concentration of Fe in the second region being lower than a concentration of Fe in the first region.