Multi-Finger High Power Gallium Nitride Based High Electron Mobility Transistors

摘要

This work explores the effect of varying widths and multi-fingers on the DC performance of Gallium Nitride power High Electron Mobility Transistors (GaN HEMTs). The experimental observations match with the expected theoretical calculations. The saturation drain current is found to scale linearly with width (W) for a fixed number of fingers (n), whereas it is observed to follow a stronger than expected dependence on n for a fixed W. This dependence on n tends towards linear as we go to higher values of drain voltages. The on-resistance and the maximum transconductance of the devices, separated from the extra leakage components, follow the expected dependence on n and W.