Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization

摘要

The power and gain characteristics of a power radio-frequency (RF) gallium nitride (GaN) high electron mobility transistor (HEMT) were investigated by using drift-diffusion model simulations that were self consistently solved with the current-voltage (I-V) characteristics of the external circuit elements. The results showed the expected drop in gain with frequency, as the corresponding output power increases, can be modeled with device physics considerations. This technique can be used to optimize device performance by determining which part of the device to modify for greatest impact.