机译:新的屏障层设计用于制造氮化镓 - 金属 - 绝缘体 - 半导体高电子迁移率晶体管常关晶体管
Univ Sherbrooke Inst Interdisciplinaire Innovat Technol 3IT LN2 Lab Nanotechnol Nanosyst CNRS UMI 3463 3000 Bd Univ Sherbrooke PQ J1K OA5 Canada;
Univ Sherbrooke Inst Interdisciplinaire Innovat Technol 3IT LN2 Lab Nanotechnol Nanosyst CNRS UMI 3463 3000 Bd Univ Sherbrooke PQ J1K OA5 Canada;
Univ Sherbrooke Inst Interdisciplinaire Innovat Technol 3IT LN2 Lab Nanotechnol Nanosyst CNRS UMI 3463 3000 Bd Univ Sherbrooke PQ J1K OA5 Canada;
Univ Cote dAzur CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France;
Univ Cote dAzur CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France;
OMMIC F-94450 Limeil Brevannes France;
Univ Lille IEMN Inst Elect Microelect & Nanotechnol CNRS UMR 8520 F-59655 Villeneuve Dascq France;
Univ Bordeaux IMS Lab Integrat Mat Syst CNRS UMR 5218 Talence France;
Univ Sherbrooke Inst Interdisciplinaire Innovat Technol 3IT LN2 Lab Nanotechnol Nanosyst CNRS UMI 3463 3000 Bd Univ Sherbrooke PQ J1K OA5 Canada;
Univ Sherbrooke Inst Interdisciplinaire Innovat Technol 3IT LN2 Lab Nanotechnol Nanosyst CNRS UMI 3463 3000 Bd Univ Sherbrooke PQ J1K OA5 Canada;
Univ Sherbrooke Inst Interdisciplinaire Innovat Technol 3IT LN2 Lab Nanotechnol Nanosyst CNRS UMI 3463 3000 Bd Univ Sherbrooke PQ J1K OA5 Canada;
Univ Cote dAzur CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France;
Univ Sherbrooke Inst Interdisciplinaire Innovat Technol 3IT LN2 Lab Nanotechnol Nanosyst CNRS UMI 3463 3000 Bd Univ Sherbrooke PQ J1K OA5 Canada;
high electron mobility transistor; normally-off; gallium nitride; gate recess;