SENSORS USING AIGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS

摘要

Embodiments of the invention include sensors comprising AlGaN/GaN high electron mobility transistors (HEMTs) with functionalization at a gate surface with: a thin gold layer and bound antibodies; a thin gold layer and chelating agents; a non- native gate dielectric, or nanorods of a non-native dielectric with an immobilized enzyme. Embodiments including antibodies or enzymes have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.