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机译:基于AIGaN / GaN高电子迁移率晶体管的DNA传感器
Department of Microsystems Engineering, University of Freiburg, Georges-Kohler-Allee 101, 79110 Freiburg, Germany,Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany;
Institute of Physics and Institute of Micro- and Nanotechnologies, Umenau, P.O. Box 100565, 98684 Ilmenau, Germany;
Institute of Physics and Institute of Micro- and Nanotechnologies, Umenau, P.O. Box 100565, 98684 Ilmenau, Germany;
AIST Tsukuba, Central 1 Tsukuba, Ibaraki 305-8561, Japan;
Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany;
Department of Microsystems Engineering, University of Freiburg, Georges-Kohler-Allee 101, 79110 Freiburg, Germany,Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany;
algan/gan hemt; dna hybridization sensor; photochemical functionalization;
机译:基于二维电子气密度和电子迁移率的AlGaN / GaN高电子迁移率晶体管规格因子仿真
机译:使用氨分子束外延在100-mm Si(111)上生长和表征AIGaN / GaN / AIGaN双异质结高电子迁移率晶体管
机译:Aigan表面氧化对Aigan / gan高电子迁移率晶体管Dc特性的影响
机译:离子与Log(Ig)图的应用表征耗尽模式高电子迁移率晶体管,随着将非常薄的蒸发的Al层插入Aigan / GaN高电子迁移率晶体管作为示例
机译:通过基于Monte Carlo粒子的器件仿真对GaN高电子迁移率晶体管和热电子晶体管进行建模和设计。
机译:氮化铝镓(GaN)/ GaN高电子迁移率晶体管传感器用于呼出气冷凝物中的葡萄糖检测
机译:氮化铝镓(GaN)/ GaN高电子迁移率晶体管传感器,用于呼出气冷凝物中的葡萄糖检测
机译:si,GaN和alGaN / GaN高电子迁移率晶体管(HEmT)晶片的非接触迁移率,载流子密度和薄层电阻测量。