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首页> 外文期刊>Journal of Materials Science >Effect of annealing temperature on the luminescence of Ce1-x PO4: Tb (x) (3+) nanocrystals: A novel theoretical model and experimental verification
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Effect of annealing temperature on the luminescence of Ce1-x PO4: Tb (x) (3+) nanocrystals: A novel theoretical model and experimental verification

机译:退火温度对Ce1-X PO4发光的影响:Tb(x)(3+)纳米晶体:一种新颖的理论模型和实验验证

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摘要

Terbium-doped cerium phosphate nanocrystals are successfully synthesized through microwave-assisted sol-gel method and are annealed at different temperatures for detailed investigation on structural and optical properties. The structural characterization carried out using X-ray diffraction analysis confirmed that all the samples are crystallized in monoclinic structure having chemical formula CePO4 and revealed the thermal stability of the synthesized samples. A novel theoretical model is proposed to investigate the influence of annealing temperature on Tb3+ by analyzing I-4/I-3-annealing temperature plot in which two regions are distinguished as above and below the crystallization temperature. A generalized equation derived in terms of rate constants for I-4/I-3 helps to frame four distinct cases describing the role of different radiative and nonradiative relaxations in the Tb3+ luminescence from D-5(3) and D-5(4) levels. The subsequent evaluation of each case described the role of defects, cross-relaxation and multiphonon relaxation in the variation of I-4/I-3 with annealing temperature and verified by the experimentally observed data with the help of TEM, FESEM, TGA and decay analysis.
机译:通过微波辅助溶胶 - 凝胶法成功地合成了掺杂的磷酸铈纳米晶体,并在不同温度下退火,以详细研究结构和光学性质。使用X射线衍射分析进行的结构表征证实,所有样品在具有化学式CePO4的单斜斜晶体结构中结晶,并揭示了合成样品的热稳定性。提出了一种新颖的理论模型来研究通过分析I-4 / I-3退火温度图的退火温度对Tb3 +的影响,其中两个区域以高于和低于结晶温度区分。在I-4 / I-3的速率常数方面衍生的广义式有助于框架四种不同的病例,其描述来自D-5(3)和D-5(4)的Tb3 +发光中不同辐射和非辐射松弛的作用水平。随后的每种情况的评估描述了在I-4 / I-3的变化中的缺陷,交叉放松和多重弛豫在退火温度下的作用,并通过通过TEM,FESEM,TGA和腐烂的实验观察数据验证分析。

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  • 来源
    《Journal of Materials Science 》 |2018年第2期| 共15页
  • 作者单位

    Mahatma Gandhi Univ Sch Pure &

    Appl Phys Kottayam 686560 Kerala India;

    Mahatma Gandhi Univ Sch Pure &

    Appl Phys Kottayam 686560 Kerala India;

    Mahatma Gandhi Univ Sch Pure &

    Appl Phys Kottayam 686560 Kerala India;

    Mahatma Gandhi Univ Sch Pure &

    Appl Phys Kottayam 686560 Kerala India;

    Mahatma Gandhi Univ Sch Pure &

    Appl Phys Kottayam 686560 Kerala India;

    Mahatma Gandhi Univ Sch Pure &

    Appl Phys Kottayam 686560 Kerala India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学 ;
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