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Electrochemical Performance of Nanocrystalline Vanadium Pentoxide Thin Films Grown by RF Magnetron Sputtering

机译:RF磁控溅射生长的纳米晶钒五氧化钒薄膜的电化学性能

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摘要

Nanocrystalline V2O5 thin films were prepared by radio frequency (RF) magnetron sputtering and explored as potential electrodes for Li-ion microbatteries and supercapacitors based on microstructure and electrochemical properties. All the films grown in the substrate temperature (T-s) range 250-350 degrees C exhibited predominant (001) orientation corresponding to the orthorhombic V2O5 layered structure. However, notable changes were observed in the surface morphology and crystallite size of the grown films by varying the substrate temperature. The films deposited at T-s of 250 degrees C showed uniformly distributed spherical grain morphology and demonstrated pseudocapacitive behavior with a specific capacitance of 960 mF cm(-2) at current density of 1 mA cm(-2) with good cycle stability. The films deposited at T-s of 350 degrees C showed needle like nanorod structure with an average crystallite size of 36 nm. These films exhibited sharp oxidation and reduction peaks, exhibiting cathodic behavior with a discharge capacity of 62.6 mu Ah cm(-2) mu m(-1) at a current rate of 50 mu A.
机译:纳米V2O5薄膜,通过射频(RF)磁控溅射法制备,并探讨作为基于微观结构和电化学性能的锂离子微电池和超级电容器电势电极。所有在衬底温度(T-S)生长的膜的范围250-350℃下表现出主要对应于斜方晶V2O5(001)取向的层状结构。然而,分别在生长的膜的表面形态和微晶尺寸通过改变衬底温度观察到显着的变化。保藏在250度T-S C中的片显示均匀分布的球状颗粒形态和证明赝电容行为与在1毫安厘米(-2)具有良好的循环稳定性的电流密度为960μF的厘米(-2)的特定电容。保藏在350度T-S C中的片显示针状纳米棒结构为36纳米的平均晶粒尺寸。这些膜显示出尖锐的氧化和还原峰,在50亩A的电流速率表现出阴极行为与62.6亩的放电容量Ah厘米(-2)微米(-1)

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