Photoconductivities of Nanocrystalline Vanadium Pentoxide Thin Film Grown by Plasma RF Magnetron Sputtering at Different Conditions of Deposition

摘要

In this study, the fabrication and characterization of a metal-semiconductor-metal (MSM) visible photodetector based on V2O5 were investigated. The V2O5 thin film was synthesized on n-type Si (100) as substrate by plasma RF-sputtering. The photoconductivity of the nanocrystalline vanadium pentoxide (V2O5|Si) was investigated at the different conditions of deposition (i.e., RF-sputtering power, pressure, and substrate temperature). The photoconductivity measurement of this work was performed in the darkness and under illumination, with applied voltage from a range of 0.1-10 V and illumination intensity 9.8 mW/cm(2). I-V characteristics under illumination showed that the films prepared from on the basis of n-Si have good efficiency and the best is at power 150 W, pressure 0.03 Torr, and temperature 473 K. The fabricated photoconductive detector showed the spectral response (R-lambda) value of 0.0783 A W-1, quantum efficiency 18.04%, spectral detectivity D* = 6.984 x 10(9) cm Hz(1/2) W-1 at wavelength 600 nm, and low spectral responsivity in the UV region.