Effectiveness of plasma and radical control for the low temperature synthesis and properties of a-SiNx:H films using RF-near microwave PECVD

摘要

By mixing and alternating power conditions of radio frequency and microwave plasma sources, a detailed study of a-SiNx:H films in the SiH4/N-2 plasma enhanced chemical vapour deposition processes is undertaken. Data reveal a remarkable coherence between the deposition conditions, material's quality, bond densities, optical property, and stoichiometry of the films. The film composition can simply vary from Si-rich to N-rich by incorporating suitable plasma and atomic radical parameters. Highly transparent and wide bandgap films with N to Si and N to H atomic ratios up to similar to 2.3 and 3.1, respectively, are prepared by controlling the plasma parameters and radicals. The presented results pave the way for dual frequency PECVD utilization in a-SiNx:H films for their use in controlled-bandgap nanodevices and light emitting applications. Published by AIP Publishing.