Electronic properties of thin SiO/sub 2/ films deposited at low temperatures by new ECR microwave PECVD process

摘要

Silicon dioxide films of 300-400 AA in thickness have been deposited at 270 degrees C by a new electron cyclotron resonant (ECR) microwave plasma enhanced chemical vapour deposition (PECVD) process. The electronic properties of the deposited films approach those of thermally grown silicon oxides with high stability.