DIELECTRIC THIN FILM FOR LOW-TEMPERATURE PROCESSING WITH EXCELLENT DIELECTRIC PROPERTIES AND FORMING AT LOW TEMPERATURE OF 350 DEG. CELSIUS OR LOWER AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A dielectric thin film for low-temperature processing and a manufacturing method thereof are provided to have high dielectric constant and to lower dielectric loss and leakage current.;CONSTITUTION: A dielectric thin film for low-temperature processing has the following formula. The formula is as follows: TaxMg1-xO. In the formula, x indicates 0.082 = x = 0.89. The x of the general formula is 0.35 = x = 0.50 or 0.80 = x = 0.89. The dielectric thin film is deposited at the room temperature to 350 deg. Celsius. The dielectric thin film is heat-treated at the higher temperature than the deposit temperature after being deposited. The dielectric thin film is heat-treated at 300-380°C. A manufacturing method of the dielectric thin film comprises the following step: depositing the thin film with the composition of TaxMg1-xO at the deposition temperature of room temperature to 350 deg. Celsius.;COPYRIGHT KIPO 2013