Global model of a low pressure ECR microwave plasma applied to the PECVD of SiO2 thin films

摘要

A global model for electronegative plasmas in a pressure range of 0.1 - 100 Pa is used to investigate the dissociation of the precursor in O-2/SiCl(CH3)(3) discharges. Microwave power is fed to the plasma by an annular waveguide ring with slotted line radiators on the inner side (SLAN) that is operated at 2.45 GHz. The modelling of the ECR plasma discharge and its application to the plasma enhanced chemical vapour deposition (PECVD) of silicon oxide films are reported. In the case of an oxygen discharge, theoretical values of the main plasma parameters ( electron density and temperature and atomic oxygen population) are presented as a function of both pressure and electromagnetic power. The model results are compared with the experimental results obtained by optical emission spectroscopy, obtaining reasonably good agreement. The application of the model to the study of the PECVD of SiO2 film from O-2/SiCl(CH3)(3) mixtures has enabled us to determine that the fragmentation of the SiCl(CH3)(3) molecule takes place mainly by electron impact dissociation, while the growth rate seems to be controlled by oxidation processes. Finally the influence of the precursor in the discharge has been studied. According to the model, in a first order approximation the insertion of the precursor causes an increase in the electron density due to the lower ionization threshold of the SiCl(CH3)(3) molecule.