Method and apparatus for the low temperature chemical vapor deposition - deposition of cvd - and pecvd (plasma-enhanced chemical vapor deposition) - films

• 1. 光伏器件、其形成方法以及等离子体增强化学气相沉积（PECVD）系统 [P] . 中国专利： CN103390697B . 2016.05.18
• 2. 光伏器件、其形成方法以及等离子体增强化学气相沉积(PECVD)系统 [P] . 中国专利： CN103390697A . 2013-11-13
• 3. AUXILIARY DEVICE FOR PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) REACTION CHAMBER AND FILM DEPOSITION METHOD USING THE SAME [P] . 美国专利： US2018073145A1 . 2018-03-15

  机译： 等离子体增强化学气相沉积（PECVD）反应室的辅助装置及采用该方法的膜沉积方法

• 4. Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD) [P] . 美国专利： US7745328B2 . 2010-06-29

  机译： 通过等离子体增强化学气相沉积（PECVD）进行氧掺杂的低介电（低k）阻挡膜

• 5. LOW DIELECTRIC (LOW K) BARRIER FILMS WITH OXYGEN DOPING BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) [P] . 美国专利： US2009053902A1 . 2009-02-26

  机译： 等离子体增强化学气相沉积法（PECVD）掺杂氧的低介电（LOW K）势垒膜

• 1. Nanomechanical and Electrochemical Properties of Diamond-Like Carbon （DLC） Films Deposited by Plasma Enhanced Chemical Vapor Deposition （PECVD） Technique [J] . 王静, 刘贵昌, 徐军, 等离子体科学和技术：英文版 . 2010,第004期
• 2. Effect of Gas Sources on the Deposition of Nano-Crystalline Diamond Films Prepared by Microwave Plasma Enhanced Chemical Vapor Deposition [J] . WENG Jun, XIONG Liwei, WANG Jianhua, 等离子体科学和技术（英文版） . 2010,第006期
• 3. Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposited by DC arc plasma jet chemical vapor deposition [J] . QU Quan-yan, QIU Wan-qi, ZENG De-chang, 中国有色金属学报（英文版） . 2009,第001期
• 4. Metrology and Optical Characterization of Plasma Enhanced Chemical Vapor Deposition, (PECVD), low temperature deposited Amorphous Carbon films [C] . F. Ferrieu, C. Chaton, D. Neira, International Conference on Frontiers of Characterization and Metrology for Nanoelectronics . 2007
• 5. Design, construction and operation of a PECVD system and development of GeO(2)-SiO(2) thin film glass dielectrics by low pressure chemical vapor deposition. [D] . Rastani, Siroos. 1998
• 6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014
• 7. Characterization of Ultra Low-k SiOC(H) Film Deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD) [O] . Sang-Yong Kim 2012

• 1. Characteristics and Electrical Properties of SiNx:H Films Fabricated by Plasma-Enhanced Chemical Vapor Deposition [J] . LING Xu-yu . 电子科技学刊 . 2005,第003期
• 2. Some Properties of Manganese Oxide （Mn-O） and Lithium Manganese Oxide （Li-Mn-O） Thin Films Prepared via Metal Organic Chemical Vapor Deposition （MOCVD） Technique [J] . Kabir O. Oyedotun1 ,Marcus Adebola Eleruja1 ,Bolutife Olofinjana1 . 材料科学与工程：中英文B版 . 2015,第005期
• 3. 低压等离子体增强化学气相沉积法(LP-PECVD)制备立方氮化碳薄膜 [C] . 张志宏 . 97全国荷电粒子源粒子束学术会议 . 1997
• 4. 常压射频低温等离子体增强化学气相沉积二氧化硅薄膜的研究 [A] . 李立 . 2006