机译:基于AlGan的365nm紫外发光二极管的性能提高了带工程最后的量子屏障
South China Normal Univ Inst Optoelect Mat &
Technol Guangdong Engn Res Ctr Optoelect Funct Mat &
Devi Guangzhou 510631 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
South China Normal Univ Inst Optoelect Mat &
Technol Guangdong Engn Res Ctr Optoelect Funct Mat &
Devi Guangzhou 510631 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
South China Normal Univ Inst Optoelect Mat &
Technol Guangdong Engn Res Ctr Optoelect Funct Mat &
Devi Guangzhou 510631 Guangdong Peoples R China;
机译:基于AlGan的365nm紫外发光二极管的性能提高了带工程最后的量子屏障
机译:量子阱和势垒中具有不同Al含量的270/290 / 330-nm AlGaN基深紫外发光二极管的分析
机译:通过将最后一个量子阱插入电子阻挡层来增强基于AlGaN的紫外发光二极管的性能
机译:嵌入氧化物结构的365 nm垂直型紫外发光二极管的外部量子效率提高
机译:增强氮化物发光二极管和激光二极管的内部量子效率和光学增益。
机译:纳米粒子掺杂的聚二甲基硅氧烷流体可增强基于AlGaN的深紫外发光二极管的光学性能
机译:基于Algan的深紫外发光二极管的奇妙光学性能与基于内仑的最后量子屏障和步进电子阻挡层