Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC;
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC;
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC;
Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC;
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC,Department of Materials Science and Engineering, Da-Yeh University, Changhua 515, Taiwan, ROC;
机译:通过局部表面等离子体激元提高GaN基垂直型发光二极管的外部量子效率
机译:结合了自织构化的氧化膜,紫外倒装芯片发光二极管的外部量子效率提高了83%
机译:基于AlGan的365nm紫外发光二极管的性能提高了带工程最后的量子屏障
机译:具有嵌入氧化物结构的365nm垂直型紫外发光二极管外部量子效率的增强
机译:增强氮化物发光二极管和激光二极管的内部量子效率和光学增益。
机译:通过局部表面等离子体激元提高GaN基垂直型发光二极管的外部量子效率
机译:通过局部表面等离子体增强了GaN基垂直发光二极管的外部量子效率
机译:N掺杂Gaas(1-x)p(x)发光二极管外量子效率的压力研究。