Pressure Study of the External Quantum Efficiency of N-Doped GaAs(1-x)P(x) Light-Emitting Diodes.

摘要

The change in electroluminescence intensity as a function of hydrostatic pressure is measured for N-doped GaAs 1-x P x diodes in the composition regions x about 0.48 and about 0.65. A large decrease with pressure is observed for the short-range N transition (x about 0.48) reflecting the effect of the nearby Gamma conduction band edge. The longer-range N x transition (x about 0.65) is observed to be much less sensitive to pressure, which agrees with the expected smaller effect of Gamma on N(x) at this composition. Based on N and Nx oscillator strengths provided by a recent theoretical model for GaAs (1-x)Px:N, calculations of the relative change in external quantum efficiency are found to fit the data well. (Author)