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Nanoparticle-Doped Polydimethylsiloxane Fluid Enhances the Optical Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

机译:纳米粒子掺杂的聚二甲基硅氧烷流体可增强基于AlGaN的深紫外发光二极管的光学性能

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摘要

This paper proposes a new encapsulation structure for aluminum nitride-based deep UV light-emitting diodes (DUV-LEDs) and eutectic flip chips containing polydimethylsiloxane (PDMS) fluid doped with SiO2 nanoparticles (NPs) with a UV-transparent quartz hemispherical glass cover. Experimental results reveal that the proposed encapsulation structure has considerably higher light output power than the traditional one. The light extraction efficiency was increased by 66.49% when the forward current of the DUV-LED was 200 mA. Doping the PDMS fluid with SiO2 NPs resulted in higher light output power than that of undoped fluid. The maximum efficiency was achieved at a doping concentration of 0.2 wt%. The optical output power at 200 mA forward current of the encapsulation structure with NP doping of the fluid was 15% higher than that without NP doping. The optical output power of the proposed encapsulation structure was 81.49% higher than that of the traditional encapsulation structure. The enhanced light output power was due to light scattering caused by the SiO2 NPs and the increased average refractive index. The encapsulation temperature can be reduced by 4 °C at a driving current of 200 mA by using the proposed encapsulation structure.
机译:本文提出了一种新的封装结构,用于氮化铝基深紫外发光二极管(DUV-LED)和共晶倒装芯片,该倒装芯片包含掺杂有SiO2纳米颗粒(NPs)的聚二甲基硅氧烷(PDMS)流体和紫外透明石英半球形玻璃盖。实验结果表明,所提出的封装结构具有比传统封装结构更高的光输出功率。当DUV-LED的正向电流为200µmA时,光提取效率提高了66.49%。用SiO2 NPs掺杂PDMS流体会比未掺杂的流体产生更高的光输出功率。在0.2 concentrationwt%的掺杂浓度下实现了最大效率。带有NP掺杂液的封装结构在200 forwardmA正向电流下的光输出功率比没有NP掺杂的光输出功率高15%。所提出的封装结构的光输出功率比传统封装结构的光输出功率高81.49%。更高的光输出功率归因于SiO2 NP引起的光散射和平均折射率的增加。使用所提出的封装结构,可以在200 mA的驱动电流下将封装温度降低4°C。

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