Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

摘要

To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall.