首页> 外国专利> HIGH LIGHT-EXTRACTION EFFICIENCY (LEE) LIGHT-EMITTING DIODE (LED)

HIGH LIGHT-EXTRACTION EFFICIENCY (LEE) LIGHT-EMITTING DIODE (LED)

机译:高吸光率(LEE)发光二极管(LED)

摘要

A light-emitting diode, comprising a substrate that has a first surface and an opposing second surface. A reflection layer is disposed on the first surface of the substrate and a light- emitting diode structure is arranged on the second surface of the substrate. The light-emitting diode structure includes a first semiconducting layer, an active layer and a second semiconducting layer disposed consecutively on the second surface. A plurality of protruding asymmetric micro-structured elements define at least a part of the second surface of the substrate such that at least a portion of a surface of each micro- structured element is disposed at an obtuse angle to the first surface of the substrate when measured from within the respective micro- structured element. The first semiconducting layer and the second semiconducting layer respectively have a first electrode and a second electrode.
机译:一种发光二极管,包括具有第一表面和相对的第二表面的基板。反射层设置在基板的第一表面上,并且发光二极管结构设置在基板的第二表面上。发光二极管结构包括连续设置在第二表面上的第一半导体层,有源层和第二半导体层。多个突出的不对称微结构元件限定了基板的第二表面的至少一部分,使得每个微结构元件的表面的至少一部分在相对于基板的第一表面成钝角的情况下设置。从相应的微结构元件中测量。第一半导体层和第二半导体层分别具有第一电极和第二电极。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号