LIGHT-EMITTING SEMICONDUCTOR DIODE HAVING HIGH LIGHT-EXTRACTION EFFICIENCY

摘要

The invention relates to a light-emitting semiconductor diode comprising at least one light-emitting chip and a transparent electronics protection body surrounding said chip at least in regions, and also a method for the production thereof. For this purpose, a layered composite film is applied at least in regions at least on the electronics protection body. The layered composite film has a carrier layer which is remote from the electronics protection body and the refractive index of which is greater than the refractive index of the electronics protection body. Moreover, the layered composite film comprises a layer which faces the electronics protection body and the basic material of which is the material of the electronics protection body. A light-emitting semiconductor diode having high light power and a method for the production thereof are developed by the present invention.