Enhanced optical performance of AlGaN-based deep-ultraviolet light-emitting diode with m-shaped hole blocking layer and w-shaped electron blocking layer

摘要

In this study, five AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) with different electron blocking layer (EBL) and hole blocking layer (HBL) have been investigated numerically. The simulation results demonstrate that the DUV LED with m-shaped HBL and w-shaped EBL has a better light output power and IQE compared with other DUV LEDs. The improvements are chiefly benefit to the high carrier concentration and high radiation recombination rate, which are caused by the lower carrier leakage and higher carrier injection in the active region of the DUV LED with m-shaped HBL and w-shaped EBL. In addition, smaller electrostatic fields in the active region of the DUV LED with m-shaped HBL and w-shaped EBL are conducive to raising the overlap of electrons and holes, thus enhance the radiation recombination rate.