PROBLEM TO BE SOLVED: To improve the efficiency of a top-emitting deep-ultraviolet light-emitting diode and to provide a high-efficiency and inexpensive ultraviolet light-emitting diode.;SOLUTION: A p-type electrode 7 is mainly composed of Ag and the thickness of the p-type electrode 7 is set to be 6 nm. The emission wavelength of a light-emitting layer 4 is adjusted to be 320 ± 5 nm. A nitride semiconductor layer such as InAlGaN or an oxide semiconductor layer such as MgZnO is used as the light-emitting layer 4.;COPYRIGHT: (C)2013,JPO&INPIT
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