机译:悬浮的P-n结Ingan / GaN多量子孔装置,底银反射器
Nanjing Univ Posts &
Telecommun Grunberg Res Ctr Nanjing 210003 Jiangsu Peoples R China;
Nanjing Univ Posts &
Telecommun Grunberg Res Ctr Nanjing 210003 Jiangsu Peoples R China;
Nanjing Univ Posts &
Telecommun Grunberg Res Ctr Nanjing 210003 Jiangsu Peoples R China;
Nanjing Univ Posts &
Telecommun Grunberg Res Ctr Nanjing 210003 Jiangsu Peoples R China;
Nanjing Univ Posts &
Telecommun Grunberg Res Ctr Nanjing 210003 Jiangsu Peoples R China;
Nanjing Univ Posts &
Telecommun Grunberg Res Ctr Nanjing 210003 Jiangsu Peoples R China;
Nanjing Univ Posts &
Telecommun Grunberg Res Ctr Nanjing 210003 Jiangsu Peoples R China;
Light-emitting diode; Multiple quantum well; Photodiodes; Integrated optics devices;
机译:悬浮的P-n结Ingan / GaN多量子孔装置,底银反射器
机译:具有多种功能的集成式p-n结InGaN / GaN多量子阱器件
机译:来自多种Ingan / GaN量子阱的电脉络光谱在P-N结的非均匀电场中
机译:InGaN / GaN多量子阱对蓝光发光二极管效率下垂的P-N量子屏障的影响
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:GaN核和InGaN / GaN多重外延生长导热铍上的量子阱核/壳纳米线氧化物基板
机译:在发光二极管器件中InGaN / GaN多量子阱中In和宽度波动的组成波动