P-N LIGHT-EMITTING DIODE WITH MULTIPLE QUANTUM WELLS AND ASYMMETRIC P-N JUNCTION

摘要

A first layer 102 of n-doped semiconductor capable of forming a cathode, and a p-doped semiconductor capable of forming an anode, forming a pn junction of the first layer 102 and diode 100 A second layer 104; Two or more light-emitting layers 106 arranged between the first and second layers and containing a semiconductor and capable of forming a quantum leak, and a plurality of light-emitting layers 106 so that each light-emitting layer 106 is positioned between the two barrier layers. An active region 105 comprising a semiconductor barrier layer 108; And an n-doped semiconductor buffer layer 110 positioned between the first layer and the active region, wherein the n-doped semiconductor of the buffer layer has a band gap energy of the p-doped semiconductor of the second layer. A light emitting diode 100 comprising an n-doped semiconductor buffer layer that is less than or equal to about 97% of the.