Light-emitting diode with multiple quantum wells and asymmetric p-n junction

摘要

A light-emitting diode including: a first n-doped semiconductor layer configured to form a cathode, and a second p-doped semiconductor layer configured to form an anode, and together forming a p-n junction of the diode; an active zone located between the first layer and the second layer, including at least two emissive layers including a semiconductor capable of forming quantum wells, and a plurality of semiconductor barrier layers such that each emissive layer is located between two barrier layers; an n-doped semiconductor buffer layer located between the first layer and the active zone, the n-dope semiconductor of the buffer layer having a band gap energy less than or equal to about 97% of the band gap energy of the p-doped semiconductor of the second layer.