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机译:具有AlGaN / GaN HEMT和基于氧化物的阈值开关装置的陡坡场效应晶体管
Arizona State Univ Sch Elect Comp &
Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp &
Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp &
Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp &
Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp &
Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp &
Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp &
Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp &
Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp &
Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp &
Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp &
Energy Engn Tempe AZ 85287 USA;
Chinese Acad Sci Suzhou Inst Nanotech &
Nanobion Key Lab Nanodevices &
Applicat Suzhou 215123 Peoples R China;
Arizona State Univ Sch Elect Comp &
Energy Engn Tempe AZ 85287 USA;
gallium nitride; steep slope; Boltzmann limit; threshold switching; transistor;
机译:具有AlGaN / GaN HEMT和基于氧化物的阈值开关装置的陡坡场效应晶体管
机译:用于高压开关AlGaN / GaN异质结构场效应晶体管的新型电感耦合等离子体化学气相沉积SiO_2钝化
机译:常关型AlGaN / GaN HEMT半浮栅晶体管中动态阈值电压行为的研究
机译:千伏AlGaN / GaN HEMT作为开关器件
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:AlGaN / GaN HEMTS在高频应用中劣化和切换时间激活能量的研究
机译:si,GaN和alGaN / GaN高电子迁移率晶体管(HEmT)晶片的非接触迁移率,载流子密度和薄层电阻测量。