NEURAL MODELING APPROACH FOR TRAPPING AND THERMAL EFFECTS ON ALGAN/GAN HEMT

摘要

In this article, a neural Approach is proposed for modeling the trapping and the thermal effect on AlGaN/GaN HEMT devices. The modeling approach is based on thermal DC and Pulsed I/V measurements. The proposed approach is tested for an 8375 lm AlGaN/GaN HEMT. The simulation results are compared to DC and Pulsed I/V measurements. Good results are obtained for the DC and the dynamic I/ V characteristics from different static bias points and over a large temperature interval -70 degrees C to + 170 degrees C. (C) 2017 Wiley Periodicals, Inc.